Tunneling effects and electron transport in quantum dot structures

Article

Tunneling effects and electron transport in quantum dot structures

Pichl, L.; Horáček, J.; Mitin, V.; Ryzhii, V.

Physica E 18, 83-84 (2003)

Abstract

Using an analytical model of electron confinement in quantum dots, we have calculated the tunnelling rates for electron quasi-bound states. Schrödinger equation for the disk-shaped system in consideration is readily solved both in the time-dependent and time-independent versions, and the quantitative importance of tunnelling phenomena in low temperature electron emission from quantum dots is revealed. Results of the quantum mechanical analysis are transferred into the device characteristics of common multi-layer quantum dot hetero-structures.

Institute authors

Horáček, Jiří

BibTeX

@article{UTF117,
  author        = {Pichl, L. and Horáček, J. and Mitin, V. and Ryzhii, V.},
  title         = {{Tunneling effects and electron transport in quantum dot structures}},
  journal       = {Physica E},
  volume        = {18},
  pages         = {83-84},
  year          = {2003},
  doi           = {10.1016/S1386-9477(02)00987-6},
  url           = {http://dx.doi.org/10.1016/S1386-9477(02)00987-6},
}